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Abstract


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IJCPS JOURNAL-Vol 4 Issue 5, Sep-Oct 2015

Pages: 99-102

Ferromagnetism in Manganese Implanted GaAs

Author: SHARAD TRIPATHI, S. K. DUBEY, B. K. PANIGRAHI

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Abstract

In the present work, 325 keV Mn+ ions were implanted into GaAs with various fluences varying from 1 x1015 to 1x1016 ions cm-2.The magnetic properties of Mn+ implanted GaAs samples were studied using super conducting quantum interference device (SQUID) techniques. M-H curves exhibit the hysteresis loops indicated the presence of magnetic behavior. To investigate the influence of the residual implant damage upon the structural and magnetic properties of Mn+ implanted GaAs was obtained from RBS experiment on implanted wafers.

Keywords: Ion Implantation, GaAs, SQUID, RBS

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