Abstract

Indium phosphide (InP) was irradiated with 100 MeV 56Fe7+ ions for various ion fluences of 5 x 1012, 5 x 1013 and 1 x 1014 cm-2 was studied for Optical and electrical parameters of the irradiated sample and comparison with the non-irradiated sample was accomplished. The changes in the optical parameters such as absorbance, energy band gap energy and defect density have been studied. Raman scattering spectroscopy measurements were carried out to understand disorders and related defects induced in the surface region of the crystalline indium phosphide due to the swift iron ion irradiation. The appearance of interference fringes with increasing amplitude and shift in the maxima and minima positions, in the Fourier transform reflectance spectra of irradiated samples showed the change in the refractive index of the irradiated layer due to presence of point defect or defect clusters in the sample. The changes in the electrical parameter such as barrier height, ideality factor and carrier concentration have been studied, using I-V and C-V measurements. Impact of increasing ion fluence was studied on energy band gap of irradiated sample.